Sanan has reportedly developed micro LEDs measuring 10x20 microns and hopes to shrink the micro LEDs further next year, offering sample chips and testing data for clients. This move to 6-inch wafers is important to reduce manufacturing costs, most other makers are still adopting 4-inch micro LED wafers for R&D and trial production.
The company expects its micro LEDs first to be used in small displays for wearable devices, meaning fewer chips are required to mass transfer per display. Then the technology could move to to large-size displays when mass transferring techniques mature.
Sanan announced it is setting up a mini/micro LED R&D and production base in central China with a budget of CNY12 billion (US$1.7 billion), with an anticipated annual production capacity of 1.61 million GaN epitaxial wafers and 750,000 GaAs wafers.